| PART |
Description |
Maker |
| RF3110 RF3110PCBA |
TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE
|
RFMD[RF Micro Devices]
|
| AWT6123 |
GSM850/GSM900/DCS/PCS Quad Band Power Amplifier
|
ANADIGICS, Inc
|
| RF3161 RF3161PCBA-410 RF3161SB |
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE
|
http://
RF Micro Devices
|
| RF3146_06 RF3146PCBA-41X RF3146SB RF314606 |
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE
|
RFMD[RF Micro Devices]
|
| RF5146PCBA-41X |
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE
|
RF Micro Devices
|
| AWT6108R AWT6108RM10P8 |
GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Integrated Power Control
|
ANADIGICS, Inc
|
| RF3158PCBA-41X RF3158 |
QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS POWER AMPLIFIER MODULE
|
RFMD[RF Micro Devices]
|
| PTF180601 PTF180601C PTF180601E |
LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz LDMOS的场效应晶体0瓦，DCS / PCS的兆赫波8050年，1930-1990兆赫
LDMOS Field Effect Transistor 60 W DCS/PCS Band 1805-1880 MHz 1930-1990 MHz
LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz
|
INFINEON[Infineon Technologies AG]
|
| AWT6166 |
GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Integrated Power Control TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, QCC18
|
ANADIGICS, Inc.
|
| CV111-1 |
PCS/DCS-band High Linearity Downconverter
|
WJ Communication
|
| CV211-1AF CV211-1A CV211-1APCB240 |
PCS/DCS-band Dual-Branch Downconverter
|
WJ Communication. Inc.
|
